Multilayer microwave integrated circuit technology for GaAs power amplifier of personal communication systems

Multilayer microwave integrated circuit, MuMIC, technology is realized by multilayer substrate of low cofired temperature ceramics. MuMIC multi-chip module (MCM) results in low cost, small size, and many functions for microwave applications. This technology is used for 1.9 GHz digital European cordless telecommunication (DECT) power amplifier. The GaAs MMIC die of the the MuMlC can be less than 1/10 compared to the conventional one by integrating the impedance matching circuits and filters in the layered structure reducing manufacturing cost. The outline of the MuMIC also is smaller than that of the conventional MMIC package. High power-added efficiency of the microwave power amplifier is obtained by taking advantage of the low resistance inner layer line ofthe MuMIC and the low on-resistance FETs.