Milliwatt power 245 nm deep ultraviolet light-emitting diodes

The paper presents a 245 nm LEDs with milliwatt continuous wave power achieved for devices with large junction area. DUV LED structure used in this work consisted of very high quality n
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-AlGaN emitter/cladding layers, AlGaN multiple quantum well active region, Mg -doped p -AlGaN cladding, and p
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-AlInGaN contact layers which were grown over (0001) sapphire substrates using combination of conventional MOCVD and proprietary MEMOCVD R process. After growth, LED wafers were processed into devices using standard RIE etching and e -beam metallization steps. These results obtain from this device represents the highest continuous wave output powers reported for sub-250 nm wavelength semiconductor light source.