High speed single dopant spin manipulation with a single electrical gate

We propose an alternate configuration for manipulation of the spin of a single Mn acceptor using an electric field applied along a single axis, and a small parallel static magnetic field (0.1 Tesla). The ground-state spin of the Mn acceptor is J = 1, corresponding to three spin eigenstates, which are split by a static magnetic and electric field. Spin manipulation is achieved by applying an oscillating electric field E
_ac
cos wt, where ¿ is set to the resonance frequency between two spin states. In a magnetic field without an electric field the energy splitting between the J¿ = - 1 and J¿ = 0 states is the same as the energy splitting between the J¿ = 0 and J¿ = 1 states. Thus a static electric field E^c is added to make the two spin splitting energies different and allow the two transitions to be independently addressed (with the two different resonance frequencies, which are both < 10 GHz). We find manipulation frequencies in excess of 1 GHz for relatively small electric fields (-Ebc = 500 V/cm) and Eac <2 kV/cm. The electric and magnetic fields are all along a low-symmetry direction of GaAs, the [113] axis. The visibility of the resonance deteriorates at higher AC electric field strengths, but remains above 80%.