Investigation of scattering mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As quantum well channel

In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO
₂
-gated, modulation doped, strained In
_0.53
Ga
_0.47
As/In
_0.77
Ga
_0.23
As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In
_0.53
Ga
_0.47
As/InAlAs barrier and HfO
₂
thickness along with controlling interface state density and using temperature dependent Hall mobility measurements we have de-convoluted the contribution of various scattering mechanisms to channel mobility degradation.