Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications

A new GaAs-In/sub x/Ga/sub 1-x/As metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130/spl deg/C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications.