Fin Width $(W_{\rm fin})$ Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

This letter is aimed at experimentally investigating the fin width (W
_fin
) dependence of both a dopant-segregated Schottky-barrier (DSSB) and a conventional FinFET SONOS device with diffused p-n junctions for application of a NOR-type flash memory device. High parasitic resistance (R
_para
) at the source/drain by a narrowed W
_fin
results in degradation of memory performance for the conventional FinFET SONOS device. In contrast, it is shown that a narrow W
_fin
significantly improves the memory performance for the DSSB FinFET SONOS device, resulting from an improved lateral electric field without a significant change of the R
_para
value.