Aspects of temperature dependence on Au-Ti/GaAs(SI) Schottky barrier

Fabrication of Au-Ti Schottky structure on GaAs semi-insulating wafer was related to an ultra-high vacuum deposition condition and low vacuum annealing in low vacuum and temperature range T=320-360degC. There are presented representative I-V characteristics in dark and in different light (power levels). The spectral response has a maximum in Deltalambda= (850-950) nm corresponding to a band-to-band transition. The complex dependence of optical generated non-equilibrium carriers is related to the equivalent state density at the conduction band edge (in T
^3/2
factor) and in exponential distribution factor exp (-(E-F)/kT).