Comparative study on THz radiation from various semiconductors

We have measured THz radiation from various semiconductor groups: InGaSb, GaAsSb, InAsSb, InAlSb, InSb, InAs, and InGaAs. The InAs series was the most intense radiation source whereas GaAsSb was the weakest one. In terms of the emission time, InGaAs (GaAsSb) was the fastest (slowest) material.