Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

High-power, 1.5- mu m, ridge-waveguide lasers with GaInAs/GaInAsP multiple-quantum-well active layers are discussed. For 1-mm-long devices, a threshold current of 35 mA and an output power of 62 mW per facet were measured. The cavity-length and doping dependence of the threshold current, quantum efficiency, and resonant frequency were investigated experimentally. With heavy Zn doping in the barrier layers, an increase in differential gain by a factor of 1.8 was observed.<
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