Analysis of sense margin and reliability of 1T-DRAM fabricated on thin-film UTBOX substrates

In this work, we have investigated the impact of back bias on the behavior of UTBOX 1T-DRAM. The back bias impacts the behavior of undoped and doped channels differently thereby leading to different optimization schemes. It was also shown that by careful optimization of the bias conditions for both “1” but also “0”, the device degradation due to hot carrier stress can be reduced significantly.