Fabrication of compressively-strained GeOI substrates using the Smart CutTM technology

Compressively-strained Germanium-on-Insulator (c-GeOI) substrates have been fabricated using the Smart Cut
^TM
technology. The technique is based on the optimized epitaxial growth process that reduces the threading dislocation density (TDD) in the strained Ge layer to the levels of 8·105 /cm
²
. Pseudo-MOSFET characterization showed 67% hole mobility enhancement with respect to conventional GeOI (150% relative to SOI).