Boron implantation using plasma source ion implantation (PSII)

Summary form only given, as follows. Boron implants with ion beam surface modification technology have been used with great success in materials applications. With plasma source ion implantation (PSII), the capability of processing large or complex geometries without sample manipulation could prove to be very useful. Boron trifluoride was used as the process gas. The sample substrates implanted were 6061 aluminum and tool steel. Processing and analysis (AES, Knoop, etc.) issues will be discussed.