A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f
_T
=240 GHz, f
_max
=330 GHz, BV
_CEO
=1.7 V) along with high-voltage HBTs (f
_T
=50 GHz, f
_max
=130 GHz, BV
_CEO
=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.