A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX

This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f
_MAX
. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f
_MAX
of 423 GHz (f
_T
= 273 GHz) is demonstrated in SiGe:C HBT technology.