A low power 1.8–2.6 dB noise figure, SiGe HBT wideband LNA for multiband wireless applications

We present a wideband, very low power, Low Noise Amplifier (LNA) implemented in Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 5-11 GHz, and achieves a peak gain of 19.2 dB and 66% fractional bandwidth. The LNA exhibits a Noise Figure (NF) of 1.8-2.6 dB across band and consumes only 9 mW of power. To the authors' knowledge, this is the lowest NF for a wideband LNA reported in a commercially-available silicon-based process, and was realized by utilizing inductive peaking, device layout optimization, and shunt capacitive feedback.