Double Mesa Sidewall Silicon Carbide Avalanche Photodiode

We report a double mesa 4H-SiC avalanche photodiode (APD) that suppresses premature edge break-down. The motivation for the double mesa structure is to eliminate the optically dead region that extends radially up to 30 mum beyond the active region of conventional beveled mesa SiC APDs, which can significantly restrict the fill-factor of arrays.