Effect of two-steps RTA on the properties of PSTT5 thin films

0.95Pb(Sc
0.5
Ta
0.5
)O
3
-0.05PbTiO
3
(PSTT5) ferroelectric thin films have been prepared by RF magnetron sputtering on LSCO/Pt/Ti/ SiO
2
/Si(100) substrates. A new two-steps rapid thermal annealing (TSRTA) was developed. TSRTA and conventional rapid thermal annealing (CRTA) were both used to anneal PSTT5 thin films. The XRD patterns shows that the PSTT5 thin films annealed by TSRTA would form pure perovskite structure and show highly (220) oriented. The ferroelectric measurements indicate that the PSTT5 thin films annealed by TSRTA possess better ferroelectric property. The 2P
r
of the PSTT5 thin films annealed by TSRTA can be 25.4µC/cm
²
.