Fractal geometry of reliefs and surface potentials in epitaxial gallium arsenide and barrier metallization

It is shown that relief forms of surface and character of distribution of potential irregularities of epitaxial gallium arsenide and barrier Au-metallization have fractal geometry, which in a local approximation must be defined as geometry and homogeneity of metal -semiconductor contact interfaces with Shottky barrier. This must be considered while designing the submicron and nano metal-semiconductor contacts.