Design and fabrication of 980nm three-active regions high power semiconductor lasers

Based on the principle of tunnel regeneration, three-active regions high power semiconductor lasers were designed and fabricated. Powered by pulse currents limited at 30 A, the emitting wavelength of 998 nm, the optical power output of 40.48 W, I
_th
of 7.95 A and the differential efficiency of 1.62 W/A were obtained.