Using Density-Gradient Theory to Model Sb-Based p-Channel FETs

Density-gradient theory is discussed as a tool for modeling Sb-based p-channel FETs. The theory's methods and approximations are reviewed with emphasis given to the phenomenological treatment of the quantum confinement. The theory is then illustrated by using it to analyze FETs having InSb, GaSb and InGaSb channels, and to project their scaling characteristics.