Ion-implanted WN 0.25 /spl mu/m gate MESFET fabricated using i-line photolithography for application to MMIC and digital IC

Straightforward WN 0.25 /spl mu/m gate MESFET process based on direct ion-implantation and i-line photolithography with double exposure process has produced high performance MESFETs. The maximum transconductance of 600 mS/mm and the k-factor of 450 ms/Vmm were obtained. As high as 65 GHz of cut-off frequency has been realized without any deembedding of parasitic effects. The MESFET shows the minimum noise figure of 0.87 dB and the associated gain of 9.97 dB at 12 GHz.