2D physics-based compact model for channel length modulation in lightly doped DG FETs

In here a model for the shortening of the channel in saturation is developed from a 2D analytical solution of Poisson's equation. The model inherently includes 2D effects by solving the differential equation with conformal mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.