XRD and AFM studies of nanocrystalline TiO2 thin films prepared by modified magnetron sputtering

In this work, influence of magnetron sputtering parameters on structural properties of TiO
₂
thin films has been outlined. Titanium dioxide thin films were deposited on silicon substrates using reactive magnetron sputtering method. Structural properties of deposited thin films were investigated by X-ray Diffraction (XRD), while diversification of surface topography was examined using Atomic Force Microscopy (AFM) method. XRD results have shown that different TiO
₂
phase was received depending on sputtering parameters. Thin films prepared at low pressure of reactive gas and with a hot target, after deposition process have the TiO
₂
- anatase structure, which passed into the TiO
₂
-rutile after additional annealing at 1070 K. Modification of sputtering conditions which leads to enhanced energy of deposition, results in the formation of the TiO2 - rutile structure observed in all as-prepared thin films. AFM studies have revealed nanocrystalline structure and existing densification of prepared thin films, which depends on deposition parameters.