Tapered Diode Laser With Reverse Bias Absorber Section

We present experimental results about gain-guided tapered diode laser having reverse bias absorber sections beside the ridge-waveguide. Due to these sections, we can avoid the propagation of unwanted modes outside the cavity. Therefore, the beam quality factor at about 6.5 W can be reduced from
M

_sigma

²
=8 down to
M

_sigma

²
=5 . Furthermore, the laser shows a more stable spectral behavior at high output power levels.