Variable-trigger voltage ESD Power Clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) Silicon Germanium Heterojunction Bipolar Transistor with Carbon incorporation

A novel ESD Power Clamps for 40 GHz applications, using a 120 GHz/100 GHz f
T
/f
MAX
Silicon Germanium Heterojunction Bipolar Transistor (HBT) with Carbon incorporation, is developed by modification of the circuit to avoid the Johnson Limit constraints for non-native voltage applications. The theory, operation, and ESD results of the ESD power clamp will be shown.