HighTemperature PointContact Transistors and Schottky Diodes Formed on Synthetic BoronDoped Diamond

Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the FIRST report of diamond transistors that have power gain. Further. the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.