Transient behaviors in partially depleted thin film SOI devices

The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis.