One-dimensional model of the power bipolar transistor with thermoelectrical interactions for circuit applications

We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber circuit simulator, in which the device's temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the ICCAP-Saber interface.