An explicit MOSFET model for analog circuit simulation

This paper presents an explicit analytical model of the MOS transistor valid in all regions of operation weak, moderate and strong inversion. The proposed model, physically derived, uses the inversion charge density as the key variable and is very simple to be incorporated in CAD programs. Moreover, our model contains only the classical parameters of the MOSFET theory. The inclusion of our model in SABER has led to simulation results which agree very closely with experiments.