Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO
x
(IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.