Behavior of laser assisted tin discharge EUV emitting plasma

Summary form only given. Extreme Ultraviolet (EUV) lithography is considered as the most promising candidate of the next generation of lithography for manufacturing ever smaller and faster chips. In our laboratory, a laser assisted tin target discharge produced plasma EUV source has been studied
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. The system comprises an Nd:YAG laser, focusing on a tin (Sn) rod embedded in one of electrodes to create plasma; and a power supply system to generate a sinusoidal discharge current of 22 kA amplitude, 250 ns half cycle that flows through the plasma between the electrodes to pinch the plasma and produce EUV radiation.