Polarization-enhanced Mg doping in InGaN/GaN superlattice for green light-emitting diodes

Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN.