High-index-contrast buried-waveguide for intersubband ultrafast all-optical switches fabricated by wafer bonding technology

We fabricated high-index-contrast II-VI-based multiple-quantum-well channel-waveguides buried in a SiO
₂
cladding-layer, for the application to intersubband transition all-optical-switches at communication wavelengths. We demonstrated the sub-picosecond switching of the waveguides using intersubband absorption saturation recovery.