Preparation and properties of lanthanum modified PbTiO/sub 3/ thin films by rf-magnetron sputtering

Highly c-axis oriented Pb/sub 1-x/La/sub x/Ti/sub 1-x/4/O/sub 3/ (PLT) thin films were prepared by rf-magnetron sputtering on (100)MgO and (100)Pt/MgO substrate. These films were characterized by X-ray and electron diffraction and electron microscope. Thin film growth manner and c-axis orientation mechanism were discussed, Dielectric measurement revealed the phase transition behavior of PLT thin films. PLT thin film of x=0.15 shows an extremely large pyroelectric coefficient of 9.5/spl times/10/sup -8/ C/cm/sup 2/ K and low dielectric constant of 330.