Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates

We propose sulfur-free wide-gap II-VI quaternary compounds of MgZnCdSe as a material of visible light emitting devices. MgZnCdSe compounds have bandgap energy from 2.1 to 3.6 eV, maintaining lattice-matching to InP substrate. MgZnCdSe lattice-matching quaternary compounds with various Mg composition were grown on (100) InP substrates, for the first time. A wide range of photoluminescence (PL) peak wavelengths from 572 nm (2.17 eV) to 398 nm (3.17 eV) at 15 K was obtained with increasing Mg composition.