Self-organization phenomenon of strained InGaAs grown on InP (311) substrates by metalorganic vapor phase epitaxy

We have found a self-organization phenomenon in strained InGaAs on an InP (311) substrate occurs during growth interruption in MOVPE growth. This phenomenon is similar to those that occur in the material system of InGaAs on GaAs (311). This suggests that the natural formation of nanostructures due to self-organization phenomena of strained layers on high Miller-index planes of III-V compound semiconductors by vapor phase epitaxy is a rather common feature.