Characterization of electron traps in AlInAs treated with plasma

Electron traps have been investigated for MBE grown n-AlInAs by isothermal capacitance transient spectroscopy measurement. Two traps, EO1(E/sub c/-0.44 eV) and EO2(E/sub c/-0.52 eV), appear for oxygen-plasma treated sample in addition to E1(E/sub c/-0.47 eV) and E2(E/sub c/-0.69 eV) traps detected for untreated (as-etched) sample. It is found that a reduction in the densities of the four traps occurs due to annealing subsequently after oxygen plasma treatment. The donor concentration, N/sub D/-N/sub A/, is reduced by annealing after oxygen plasma treatment. The compensation effect may be attributed to acceptor-like defect centers created by plasma process.