Preparation and optical characterization of nanoscale InP islands embedded in In/sub 0.48/Ga/sub 0.52/P

We report on the preparation of InP islands embedded in In/sub 0.48/Ga/sub 0.52/P by solid-source molecular beam epitaxy (MBE). We have investigated the onset of islanding by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). Overgrown InP islands are characterized by cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements.