MOVPE-overgrowth for buried InP/(In,Ga)(As,P) laser diode arrays

In this work we studied the growth kinetics of InP and (In,Ga)(As,P) during the regrowth process over rectangular mesas with <011> oriented sidewalls as a function of the growth temperature, of the mesa orientation and of the mesa size. We demonstrate that small changes in T/sub g/ may result in a suppression of growth on the {011} and {111}B planes. Results of overgrown laser structures for laser diode arrays demonstrate the good quality of the developed overgrowth process.