MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

Buried heterostructure (BH) devices need the regrowth of InP around mesa stripes containing the active region. A crucial point in embedding the heterostructure laser mesas is the edge overgrowth effect, especially when the stripe height is required to be very high (1). Furthermore, a dielectric mask may be present on the semiconductor surface to define the deposition area: e.g. the selective growth of semi-insulating InP around laser mesas for high speed operation devices. After regrowth it is very useful to have a surface as planar as possible for subsequent technological steps and to make good electric contacts. In this work we investigate on the regrowth of InP around mushroom-like cross section stripes, conventional stripes masked with SiN/sub x/ and tall mesa stripes with dielectric mask on the top by pulsed metalorganic epitaxy (PME).