Step bunching of InP caused by heavy doping of Se in metalorganic chemical vapor deposition and its application to device fabrication

We have found that step bunching occurs in heavily Se doped InP, grown by MOCVD, for both [001] and (111)B planes and that it occurs with a lower Se source gas flow rate for the (111)B plane than for the [001] plane. Using this heavy Se doping, we have successfully fabricated novel planar buried heterostructure lasers on p-InP substrates, in which the Se-doped n-InP current blocking layer does not make contact with the n-InP cladding layer.