Metalorganic vapour phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)

A variety of monoalkyl, dialkyl as well as trialkyl P-compounds, containing ethyl, isopropyl, and tertiarybutyl rest groups have been synthesized and used for the growth of InP bulk epitaxial layers by low pressure metalorganic vapour phase epitaxy. Almost uncompensated, n-type InP-layers (1.0/spl middot/10/sup 15/ cm/sup -3/ 59600 cm/sup -2/ V/sup -1/ s/sup -1/ at 77 K) are realized using the not specifically purified precursor ditertiarybutyl phosphine ((C/sub 4/H/sub 9/)/sub 2/-P-H, DitBuPH) in combination with commercial TMIn. Layer quality has been investigated by means of optical and scanning electron microscopy (SEM), temperature-dependent van der Pauw-Hall as well as photoluminescence (PL) measurements. All results are compared with those obtained by using PH/sub 3/ as P-source.