GaN-based monolithic LED micro-arrays

LED array displays made with individually packaged devices has been widely used for various applications. In recent years, different techniques are exploited to fabricate monolithic passive addressable LED arrays [1][2][3][4]. The array dimensions and pixel brightness in conventional passive addressable LED arrays were limited by the loading effect in the same row or column. Therefore, a new addressing scheme and fabrication technology are needed to improve the operating effectiveness of monolithic LED arrays.