Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS

A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N/sub 2/O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6 nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.