Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices

The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400 °C. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.