Modeling p-i(multi quantum well)-n solar cells: a contribution for a near optimum design

The AMO efficiency of p-i-n solar cells with quantum wells in the intrinsic region is calculated with the consideration of a large range of geometrical parameters. The near optimum design is set when the device exhibits an increase in photocurrent output with minimum open circuit voltage degradation. The method is applied to an InP cell with InGaAs MQWs added in the intrinsic region. The authors' model leads to estimates of the p-i(MQW)-n photocurrent and open circuit voltage; as well as efficiency versus well and intrinsic zone widths. The effect of the generation-recombination current on device performance is also treated. Moreover, the use of internal Bragg reflectors placed between the buffer layer and the cell structure is investigated.