Electrochemical characterization of InP and GaAs based structures for space solar cell applications

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on InP and GaAs, using a newly developed electrolyte based on HF, CH/sub 3/COOH, o-H/sub 3/PO/sub 4/, C/sub 9/H/sub 14/CIN and NH/sub 3/F/sub 2/. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.