3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

The bipolar amplification and charge collection of Planar Double-Gate MOSFETs and FinFETs with independent gates is investigated. The transient response of independent-gate devices is compared to that of conventional devices having the gates tied together. We show that the bipolar amplification is higher in independent-gate devices than in conventional devices for both positive and negative back gate bias.