Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions. This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be in good agreement on a 90 nm bulk SRAM. The simulated SRAM structure includes the N-well, which is known to be a barrier to the charge carriers.