Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

An analytical procedure to extract the surface recombination velocity of the SiO/sub 2//n-type silicon interface, S/sub p/, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S/sub p/ are significantly affected by the assumed material parameters for highly doped silicon, /spl tau//sub p/, /spl mu//sub p/ and /spl Delta/E/sub g//sup app/. Updated values for these parameters are used to obtain the dependence of S/sub p/ on the phosphorus concentration, N/sub D/, using both previous and new experimental data. The new evidence supports the finding that S/sub p/ increases strongly with N/sub D/.